The 250A STV250N55F3 power MOSFET combines ribbon bonding with a surface-mount power package to deliver 1.5-mΩ on-resistance with the ability to handle high currents for 55V applications. The MOSFET ...
RF and microwave integrated circuits (ICs), monolithic microwave ICs (MMICs) and systems in package (SiPs) are vital for a wide range of applications. These include mobile phones, wireless local-area ...
GENEVA, SWITZERLAND—A power MOSFET developed by STMicroelectronics takes advantage of the company’s ribbon-bonding technology. This delivers a low typical RDS(on) of 800 micro-ohms, which ST claims is ...
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